## Download High power diode lasers : fundamentals, technology, by Diehl R. (ed.) PDF

By Diehl R. (ed.)

Advent to energy Diode Lasers via P. Unger.- Dynamics of High-Power Diode Lasers by means of E. Gehrig, O. Hess.- Epitaxy of High-Power Diode-Laser buildings by way of M. Weyers, A. Bhattacharya, F. Bugge, A. Knauer.- GaAs Substrates for High-Power Diode Lasers through Georg Muller, P. Berwian, E. Buhrig, B. Weinert.- High-Power Broad-Area Diode Lasers and Laser Bars by means of G. Erbert, A. Barwolf, J. Sebastian, J. Tomm.- houses and Frequency Conversion of High-Brightness Diode-Laser platforms through K.-J. Boller, B. Beier, R. Wallenstein.- Tapered High-Power, High-Brightness Diode Lasers: layout and function through M. Mikulla.- Cooling and Packaging of High-Power Diode Lasers through P. Loosen.- High-Power Diode-Lasers for Direct functions via U. Brauch, P. Loosen, H. Opower.- New innovations for Diode-Pumped Solid-State Lasers via A. Tunnermann, H. Zellmer, W. Schone, A. Giesen, ok. Contag

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Fundamental-lateral-mode operation can be obtained in these devices for small stripe widths. A single-mode stripe laser is rather easy to fabricate but has some disadvantages. Compared to index-guided lasers, the threshold current is larger because the waveguide is rather lossy. Since the mode partially propagates in absorbing material, the phasefront of the mode is curved, leading to a signiﬁcant astigmatism in the output beam. The principle of index-guided lasers is illustrated in the center of Fig.

68) Now the rate equation for the carriers is complete and can be written as ηi j N dN = − − vgr g(N, λ0 ) Nph . dt qd τ (69) 40 Peter Unger It is common to approximate the dependency of the material gain g(N, λ0 ) as a linear function of the carrier density N . g(N ) = ad (N − Ntr ) , ad = ∂g , ∂N (70) with ad being the diﬀerential gain coeﬃcient and Ntr the transparency carrier density. Ntr is the carrier density, where the material losses of the active medium are compensated by the optical gain, resulting in material which is optically transparent for light with vacuum wavelength λ0 .

42 Peter Unger To derive the carrier density N below threshold, (80) is inserted into (77) giving ηi τ N= j. (82) qd The carrier density N below threshold is proportional to the density j of the injected current. In practice, this relation does not hold because (62) should be used to describe the carrier losses below threshold instead of (64). In this case, τ depends on the carrier density N . τ (N ) = 1 . A + B N + C N2 (83) To get the photon density above threshold, (81) is inserted into (77) giving τph ηi τph j−Γ Nth .